1 composite transistors XP0B301 (xp1b301) silicon pnp epitaxial planer transistor (tr1) silicon npn epitaxial planer transistor (tr2) for general amplification features two elements incorporated into one package. (tr1 emitter is connected to tr2 base.) reduction of the mounting area and assembly cost by one half. basic part number of element 2sb709a (2sb0709a) + 2sd601a (2sd0601a) absolute maximum ratings (ta=25?c) unit: mm marking symbol: 4q internal connection parameter symbol ratings unit collector to base voltage v cbo C60 v collector to emitter voltage v ceo C50 v emitter to base voltage v ebo C7v collector current i c C100 ma peak collector current i cp C200 ma collector to base voltage v cbo 60 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 7v collector current i c 100 ma peak collector current i cp 200 ma total power dissipation p t 150 mw junction temperature t j 150 ?c storage temperature t stg C55 to +150 ?c tr1 overall tr2 1 : base (tr1) 3 : emitter (tr2) 2 : base (tr2) 4 : collector (tr2) emitter (tr1) 5 : collector (tr1) eiaj : scC88a smini5-g1 package 2.1 0.1 0.9 +0.2 C0.1 0.9 0.1 0 to 0.1 1.25 0.10 1 3 2 0.20 0.05 (0.425) 1.3 0.1 2.0 0.1 54 (0.65) (0.65) 0.2 0.1 0.12 +0.05 C0.02 5 10 15 tr2 tr1 2 34 note) the part number in the parenthesis shows conventional part number.
2 composite transistors XP0B301 electrical characteristics (ta=25?c) tr1 parameter symbol conditions min typ max unit collector to base voltage v cbo i c = C10 a, i e = 0 C60 v collector to emitter voltage v ceo i c = C2ma, i b = 0 C50 v emitter to base voltage v ebo i e = C10 a, i c = 0 C7v collector cutoff current i cbo v cb = C20v, i e = 0 C 0.1 a i ceo v ce = C10v, i b = 0 C100 a forward current transfer ratio h fe v ce = C10v, i c = C2ma 160 460 collector to emitter saturation voltage v ce(sat) i c = C100ma, i b = C10ma C 0.3 C 0.5 v transition frequency f t v cb = C10v, i e = 1ma, f = 200mhz 80 mhz collector output capacitance c ob v cb = C10v, i e = 0, f = 1mhz 2.7pf tr2 parameter symbol conditions min typ max unit collector to base voltage v cbo i c = 10 a, i e = 0 60 v collector to emitter voltage v ceo i c = 2ma, i b = 0 50 v emitter to base voltage v ebo i e = 10 a, i c = 0 7v collector cutoff current i cbo v cb = 20v, i e = 0 0.1 a i ceo v ce = 10v, i b = 0 100 a forward current transfer ratio h fe v ce = 10v, i c = 2ma 160 460 collector to emitter saturation voltage v ce(sat) i c = 100ma, i b = 10ma 0.1 0.3 v transition frequency f t v cb = 10v, i e = C2ma, f = 200mhz 150 mhz collector output capacitance c ob v cb = 10v, i e = 0, f = 1mhz 3.5 pf
3 composite transistors XP0B301 common characteristics chart p t ta characteristics charts of tr1 i c v ce i c i b i b v be i c v be v ce(sat) i c h fe i c 0 50 100 150 200 250 02040 80 60 140 120 100 160 ambient temperature ta ( ?c ) total power dissipation p t ( mw ) 0 0 C18 C2 C4 C6 C8 C10 C12 C14 C16 C60 C50 C40 C30 C20 C10 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b = C300 a C250 a C200 a C150 a C100 a C50 a 0 0 C100 C200 C300 C400 C60 C50 C40 C30 C20 C10 base current i b ( a ) collector current i c ( ma ) v ce =C5v ta=25?c 0 0 C0.4 C0.8 C1.2 C1.6 C400 C350 C300 C250 C200 C150 C100 C50 base to emitter voltage v be ( v ) base current i b ( a ) v ce =C5v ta=25?c 0 0 C2.0 C1.6 C1.2 C0.8 C0.4 C240 C200 C160 C120 C80 C40 base to emitter voltage v be ( v ) collector current i c ( ma ) v ce =C5v ta=75?c C25?c 25?c C0.001 C0.003 C1 C3 C0.01 C0.03 C0.1 C0.3 C1 C3 C10 C10 C30 C100 C300 C1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 C1 C3 600 500 400 300 200 100 C10 C30 C100 C300 C1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = C10v ta=75?c 25?c C25?c
4 composite transistors XP0B301 f t i e c ob v cb nf i e nf i e h parameter i e h parameter v ce characteristics charts of tr2 i c v ce i b v be i c v be 0 0.1 0.3 40 80 120 160 140 100 60 20 1 3 10 30 100 transition frequency f t ( mhz ) emitter current i e ( ma ) v cb =C10v ta=25?c 0 C1 C 5 C20 C2 8 7 6 5 4 3 2 1 C3 C50 C10 C30 C100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 0 0.01 0.03 6 5 4 3 2 1 0.1 0.3 1 3 10 noise figure nf ( db ) emitter current i e ( ma ) v cb =C5v f=1khz r g =2k ? ta=25?c 0 0.1 20 2 18 4 6 8 10 12 14 16 0.3 1 3 10 2 0.5 0.2 5 noise figure nf ( db ) emitter current i e ( ma ) v cb =C5v r g =50k ? ta=25?c f=100hz 10khz 1khz 1 0.1 2 3 5 10 20 30 50 100 200 300 0.3 1 3 10 2 0.5 0.2 5 parameter h emitter current i e ( ma ) v ce =C5v f=270hz ta=25?c h fe h oe ( s) h ie (k ? ) h re ( 10 C4 ) 1 0.1 2 3 5 10 20 30 50 100 200 300 0.3 1 3 10 2 0.5 0.2 5 parameter h collector to emitter voltage v ce ( v ) i e =2ma f=270hz ta=25?c h fe h oe ( s) h ie (k ? ) h re ( 10 C4 ) 0 010 24 8 6 60 50 40 30 20 10 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =160 a 140 a 120 a 100 a 80 a 60 a 40 a 20 a 0 01.0 0.8 0.6 0.4 0.2 1200 1000 800 600 400 200 base to emitter voltage v be ( v ) base current i b ( a ) v ce =10v ta=25?c 0 02.0 1.6 1.2 0.8 0.4 240 200 160 120 80 40 base to emitter voltage v be ( v ) collector current i c ( ma ) v ce =10v ta=75?c C 25?c 25?c
5 composite transistors XP0B301 i c i b v ce(sat) i c h fe i c f t i e nv i c 0 0 1000 800 600 400 200 240 200 160 120 80 40 collector current i c ( ma ) base current i b ( a ) v ce =10v ta=25?c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 0.1 0.3 600 500 400 300 200 100 1 3 10 30 100 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c C25?c 0 C0.1 C0.3 300 240 180 120 60 C1 C 3 C10 C 30 C100 transition frequency f t ( mhz ) emitter current i e ( ma ) v cb =10v ta=25?c 0 10 240 200 160 120 80 40 30 100 300 1000 50 500 20 200 noise voltage nv ( mv ) collector current i c ( a ) v ce =10v g v =80db function=flat ta=25?c 4.7k ? r g =100k ? 22k ?
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